publication date : february 2012 1 < dual-in-line package intelligent power module > PS22A79 transfer molding type insulated type outline main features and ratings 3 phase dc/ac inverter 1200v / 50a built-in lpt-cstbt (6th generation igbt) insulated transfer molding package n-side igbt open emitter application ac 400v class motor control integrated drive, protection and system control functions for p-side : drive circuit, high voltage high-speed level shifting, control supply under-voltage (uv) protection for n-side : drive circuit, control supply under-voltage protection (uv), short circuit protection (sc) fault signaling : corresponding to sc fault (n-side igbt), uv fault (n-side supply) temperature output : outputting lvic temperature by analog signal input interface : 5v line, schmitt trigger receiver circuit (high active) ul recognized : ul1557 file e80276 internal circuit ho hvic3 ho hvic2 ho hvic1 lvic u out v out w out igbt1 di1 igbt2 di2 igbt3 di3 igbt4 di4 igbt5 di5 igbt6 di6 nu w v u p nv nw fo w n v n u n w p v p u v nc v n1 v p1 v p1 v p1 v wfs v vfs v ufs v wfb v vfb v ufb v pc v ot cin vsc cfo
< dual-in-line package intelligent power module > PS22A79 transfer molding type insulated type publication date : february 2012 2 maximum ratings (t j = 25c, unless otherwise noted) inverter part symbol parameter condition ratings unit v cc supply voltage applied between p-nu,nv,nw 900 v v cc(surge) supply voltage (surge) applied between p-nu,nv,nw 1000 v v ces collector-emitter voltage 1200 v i c each igbt collector current t c = 25c 50 a i cp each igbt collector current (peak) t c = 25c, up to 1ms 100 a p c collector dissipation t c = 25c, per 1 chip 129.9 w t j junction temperature -20~+150 c control (protection) part symbol parameter condition ratings unit v d control supply voltage applied between v p1 -v pc , v n1 -v nc 20 v v db control supply voltage applied between v ufb -v ufs , v vfb -v vfs , v wfb -v wfs 20 v v in input voltage applied between u p , v p , w p -v pc , u n , v n , w n -v nc -0.5~v d +0.5 v v fo fault output supply voltage applied between f o -v nc -0.5~v d +0.5 v i fo fault output current sink current at f o terminal 1 ma v sc current sensing input voltage applied between cin-v nc -0.5~v d +0.5 v total system symbol parameter condition ratings unit v cc(prot) self protection supply voltage limit (short circuit protection capability) v d = 13.5~16.5v, inverter part t j = 125c, non-repetitive, up to 2s 800 v t c module case operation temperature (note 1) -20~+100 c t stg storage temperature -40~+125 c v iso isolation voltage 60hz, sinusoidal, ac 1min, between connected all pins and heat sink plate 2500 v rms note 1: tc measurement point is described in fig.1. fig. 1: t c measurement point thermal resistance limits symbol parameter condition min. typ. max. unit r th(j-c)q inverter igbt part (per 1/6 module) - - 0.77 k/w r th(j-c)f junction to case thermal resistance (note 2) inverter fwdi part (per 1/6 module) - - 1.25 k/w note 2: grease with good thermal conductivity and long-term endurance should be applied evenly with about +100m~+200m on the contacting surface of dipipm and heat sink. the contacting thermal resistance between dipipm case and heat sink rth(c-f) is determined by the thickne ss and the thermal conductivity of the applied grease. for reference, rth(c-f) is about 0.2k/w (per 1/6 module, grease thickness: 20m, thermal co nductivity: 1.0w/m?k). measurement point for tc
< dual-in-line package intelligent power module > PS22A79 transfer molding type insulated type publication date : february 2012 3 electrical characteristics (t j = 25c, unless otherwise noted) inverter part limits symbol parameter condition min. typ. max. unit t j = 25c - 1.90 2.60 v ce(sat) collector-emitter saturation voltage v d =v db = 15v, v in = 5v, i c = 50a t j = 125c - 2.10 2.80 v v ec fwdi forward voltage v in = 0v, -i c = 50a - 2.50 3.20 v t on 0.70 1.50 2.40 s t c(on) - 0.50 0.80 s t off - 2.50 3.70 s t c(off) - 0.40 0.80 s t rr switching times v cc = 600v, v d = v db = 15v i c = 50a, t j = 125c, v in = 0?5v inductive load (upper-lower arm) - 0.50 - s t j = 25c - - 1 i ces collector-emitter cut-off current v ce =v ces t j = 125c - - 10 ma control (protection) part limits symbol parameter condition min. typ. max. unit v d =15v, v in =0v - - 5.60 i d total of v p1 -v pc , v n1 -v nc v d =15v, v in =5v - - 5.60 v d =v db =15v, v in =0v - - 1.10 i db circuit current each part of v ufb -v ufs , v vfb -v vfs, v wfb -v wfs v d =v db =15v, v in =5v - - 1.10 ma i sc short circuit trip level -20ctj125c, rs=34? (1%), not connecting outer shunt resistors to nu,nv,nw terminals (note 3) 85 - - a uv dbt trip level 10.0 - 12.0 v uv dbr p-side control supply under-voltage protection(uv) t j 125c reset level 10.5 - 12.5 v uv dt trip level 10.3 - 12.5 v uv dr n-side control supply under-voltage protection(uv) t j 125c reset level 10.8 - 13.0 v v foh v sc = 0v, f o terminal pulled up to 5v by 10k? 4.9 - - v v fol fault output voltage v sc = 1v, i fo = 1ma - - 0.95 v t fo fault output pulse width c fo =22nf (note 4) 1.6 2.4 - ms i in input current v in = 5v 0.70 1.00 1.50 ma v th(on) on threshold voltage - - 3.5 v th(off) off threshold voltage applied between u p , v p , w p , u n , v n , w n -v nc 0.8 - - v v ot temperature output lvic temperature = 75 c with 5k? pull down resistor (note 5) 2.26 2.38 2.51 v note 3: short circuit protection detects sense current divided from main current at n-side igbt and works for n-side igbt only. in the case that outer shunt resistor is inserted into main current path, protection current level i sc changes. for details, please refer the application note for this dipipm. note 4: fault signal is output when short circuit or n-side control supply under-voltage protection works. the fault output pulse-w idth t fo depends on the capacitance of c fo . (c fo (typ.) = t fo x (9.1 x 10 -6 ) [f]) note 5: dipipm doesn't shutdown igbts and output fault signal automatically when temperature rises excessively. when temperature exceeds the protective level that user defined, controller (mcu) should stop the dipipm immediately. this output might reach 5v when temperature rises excessively, so in the case of using low voltage controller like 3.3v mcu, it is recommended to insert a clamp di between controller supply (e.g. 3.3v) and v ot output for overvoltage protection. temperature of lvic vs. v ot output characteristics and v ot output circuit are described in fig.2 and fig.3.
< dual-in-line package intelligent power module > PS22A79 transfer molding type insulated type publication date : february 2012 4 fig. 2 temperature of lvic vs. v ot output characteristics 2.38 2.26 2.51 1.0 1.5 2.0 2.5 3.0 3.5 4.0 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 lvic temperature (c) v ot output (v) _ max . min. ty p. fig.3 v ot output circuit (1) it is recommended to insert 5k? or more (5.1k? is recommended.) pull down resistor for getting linear output characteristics at lower temperature than room temperature. when the pull down resistor is inserted between v ot and v nc (control gnd), the extra current calculated by v ot output voltage / pull down resistance flows as lvic circuit current continuously. in the case of only using v ot for detecting higher temperature than room temperature, it isn't necessary to insert the pull down resistor. (2) this output might reach 5v when temperature rises excessively, so in the case of using low voltage controller like 3.3v mcu, it is recommended to insert a clamp di between controller supply (e.g. 3.3v) and v ot output for overvoltage protection. (3) if v ot output function is unnecessary, leave this output terminal open (no connection). please refer the application note about the usage of v ot too. ref v ot temperature signal v nc inside lvic of dipipm 5k? mcu
< dual-in-line package intelligent power module > PS22A79 transfer molding type insulated type publication date : february 2012 5 mechanical characteristics and ratings limits parameter condition min. typ. max. unit mounting torque mounting screw : m4 recommended 1.18nm 0.98 1.18 1.47 nm terminal pulling strength load 19.6n eiaj-ed-4701 10 - - s terminal bending strength load 9.8n, 90deg. bend eiaj-ed-4701 2 - - times weight - 46 - g heat-sink flatness (note 6) -50 - 100 m note 6: measurement point of heat-sink flatness recommended operation conditions limits symbol parameter condition min. typ. max. unit v cc supply voltage applied between p-nu, nv, nw 350 600 800 v v d control supply voltage applied between v p1 -v pc , v n1 -v nc 13.5 15.0 16.5 v v db control supply voltage applied between v ufb -v ufs , v vfb -v vfs , v wfb -v wfs 13.0 15.0 18.5 v v d , v db control supply variation -1 - +1 v/s t dead arm shoot-through blocking time for each input signal 3.3 - - s f pwm pwm input frequency t c 100c, t j 125c - - 20 khz f pwm = 5khz - - 25 i o allowable r.m.s. current v cc = 600v, v d = 15v, p.f = 0.8, sinusoidal pwm t c 100c, t j 125c (note 7) f pwm = 15khz - - 13 arms pwin(on) (note 8) 1.5 - - i c 50a 3.0 - - pwin(off) minimum input pulse width 350 v cc 800v, 13.5 v d 16.5v, 13.0 v db 18.5v, -20c t c 100c, n line wiring inductance less than 10nh (note 9) 50a < dual-in-line package intelligent power module > PS22A79 transfer molding type insulated type publication date : february 2012 6 fig. 5 timing charts of dipipm protective functions [a] short-circuit protection (n-side only with the external sense resistor and rc filter) a1. normal operation: igbt on and outputs current. a2. short circuit current detection (sc trigger) (it is recommended to set rc time constant 1.5~2.0s so that igbt shut down within 2.0s when sc occurs.) a3. all n-side igbt's gates are hard interrupted. a4. all n-side igbts turn off. a5. f o outputs with a fixed pulse width determined by the external capacitor c fo . a6. input = l: igbt off a7. fo finishes output, but igbts don't turn on until inputting next on signal (l h). (igbt of each phase can return to normal state by inputting on signal to each phase.) a8. normal operation: igbt on and outputs current. [b] under-voltage protection (n-side, uv d ) b1. control supply voltage v d exceeds under voltage reset level (uv dr ), but igbt turns on by next on signal (l h). (igbt of each phase can return to normal state by inputting on signal to each phase.) b2. normal operation: igbt on and outputs current. b3. v d level drops to under voltage trip level. (uv dt ). b4. all n-side igbts turn off in spite of control input condition. b5. fo outputs for the period determined by the capacitance c fo, but output is extended during v d keeps below uv dr . b6. v d level reaches uv dr . b7. normal operation: igbt on and outputs current by next on signal (l h). lower-side control input protection circuit state internal igbt gate output current ic sense voltage of the sense resistor error output fo sc trip current level a2 set reset sc reference voltage a1 a3 a6 a7 a4 a8 a5 delay by rc filtering uv dr reset set reset uv dt b1 b2 b3 b4 b6 b7 b5 control input protection circuit state control supply voltage v d output current ic error output fo
< dual-in-line package intelligent power module > PS22A79 transfer molding type insulated type publication date : february 2012 7 [c] under-voltage protection (p-side, uv db ) c1. control supply voltage v db rises. after the voltage reaches under voltage reset level uv dbr , igbt turns on by next on signal (l h). c2. normal operation: igbt on and outputs current. c3. v db level drops to under voltage trip level (uv dbt ). c4. igbt of corresponding phase only turns off in spite of control input signal level, but there is no f o signal output. c5. v db level reaches uv dbr . c6. normal operation: igbt on and outputs current by next on signal (l h). fig. 6 mcu i/o interface circuit fig. 7 wiring pattern around the shunt resistor in the case of inserting into main current path control input protection circuit state control supply voltage v db output current ic error output fo uv dbr reset set reset uv dbt keep high-level (no fault output) c1 c2 c3 c4 c5 c6 u p ,v p ,w p ,u n ,v n ,w n fo v nc (logic) dipipm mcu 10k 5v line 3.3k ( min ) note) design for input rc filter depends on the pwm control scheme used in the application and the wiring impedance of the printed circuit board. but because noisier in the application for 1200v, it is strongly recommended to insert rc filter. (time constant: over 100ns. e.g. 100?, 1000pf) the dipipm input signal interface integrates a min. 3.3k? pull-down resistor. therefore, when using rc filter, be careful to satisfy turn-on threshold voltage requirement. fo output is open drain type. it should be pulled up to the positive side of 5v or 15v power supply with the resistor that limits fo sink current i fo under 1ma. in the case of pulling up to 5v supply, over 5.1k? is needed. (10k? ??is recommended.) low inductance shunt resistor like surface mounted (smd) type is recommended. protection current level i sc changes by inserting shunt resistor. n1 v nc nu nv nw dipipm gnd wiring from v nc should be connected close to the terminal of shunt resistor. shunt resistors each wiring inductance should be less than 10nh. inductance of a copper pattern with length=17mm, width=3mm is about 10nh.
< dual-in-line package intelligent power module > PS22A79 transfer molding type insulated type publication date : february 2012 8 fig. 8 example of application circuit note 1 :if control gnd and power gnd are patterned by common wiring, it may cause malfunction by fluctuation of power gnd level. it is recommended to connect control gnd and power gnd at only a n1 point at which nu, nv, nw are connected to power gnd line. 2 :it is recommended to insert a zener diode d1 (24v/1w) between each pair of control supply terminals to prevent surge destruc tion. 3 :to prevent surge destruction, the wiring bet ween the smoothing capacitor and the p, n1 terminals should be as short as possible. generally inserting a 0.1~0.22f snubber capacitor c3 between the p-n1 terminals is recommended. 4 :r1, c4 of rc filter for preventing protection circuit malfunction is recommended to select tight tolerance, temp-compensated type. the time constant r1c4 should be set so that sc current is shut down within 2s. (1.5s~2s is general value.) sc interrupting time might vary with th e wiring pattern, so the enough evaluation on the real system is recommended. if r1 is too small, it may leads to delay of protection. so r1 should be min. 10 times larger resistance than rs. (100 times is recommended.) 5 :to prevent err oneous operation, the wiring of a, b, c should be as short as possible. 6 :for sense resistor, the variation within 1%(including temperature characteristics), low inductance type is recommended. and the over 1/8w is recommended, but it is necessary to evaluate in your real system finally. 7 :to prevent erroneous sc protection, the wiring from v sc terminal to cin filter should be divided at the point d that is close to the terminal of sense resistor. and the wiring should be patterned as short as possible. 8 :all capacitors should be mounted as close to the terminals of the dipipm as possible. (c1: good temperature, frequency characteristic electrolytic type, and c2: 0.22~2.0f, good temperature, frequency and dc bias characteristic ceramic type are recommended.) 9 :input drive is high-active type. there is a min. 3.3k? pull-down resistor in the input circuit of ic. to prevent malfunction, the wiring of each input should be as short as possible. and it is strongly recommended to insert rc filter (e.g. r3=100? and c5=1000pf) and confirm the input signal level to meet the turn-on and turn-off threshold voltage. thanks to hvic inside the module, direct coupling to mcu without any opto-coupler or transforme r isolation is possible. 10 :fo output is open drain type. it should be pulled up to mcu or control power supply (e.g. 5v,15v) by a resistor that makes ifo up to 1ma. (ifo is estimated roughly by the formula of control power supply voltage divided by pull-up resistance. in the case of pulled up to 5v, 10k? (5k? or more) is recommended.) 11 :error signal output width (t fo ) can be set by the capacitor connected to c fo terminal. c fo (typ.) = t fo x (9.1 x 10 -6 ) (f) 12 :high voltage (v rrm =1200v or more) and fast recovery diode (trr=less than 100ns or less) should be used for d2 in the bootstrap circuit. 13 :if high frequency noise superimposed to the control supply line, ic malfunction might happen and cause erroneous operation. to avoid such problem, voltage ripple of control supply line should meet dv/dt +/-1v/s, vripple2vp-p. 14 :for dipipm, it isn't recommended to drive same load by parallel connection with other phase igbt or other dipipm. r3 c5 r3 c5 r3 c5 r3 c5 r3 c5 v pc (15) m mcu c2 15v v d c4 r1 sense resistor n1 c 5v a + u n (27) v n (28) w n (29) fo(26) v n1 (21) v nc (22) p(40) u(39) w(37) nu(36) lvic v(38) cin(24) nv(35) nw(34) igbt1 igbt2 igbt3 igbt4 igbt5 igbt6 di1 di2 di3 di4 di5 di6 c1 v ot (23) w p (13) v wfb (16) v wfs (18) c1 d1 c2 + v p1 (14) c2 d2 v p (7) hvic v vfs (12) c1 d1 c2 + v p1 (9) c2 d2 u p (1) hvic v ufb (4) v ufs (6) c1 d1 c2 + v p1 (3) c2 d2 c fo (25) d1 c3 v sc (19) + r2 rs d b r3 c5 v vfb (10) hvic power gnd wiring control gnd wiring
< dual-in-line package intelligent power module > PS22A79 transfer molding type insulated type publication date : february 2012 9 fig. 9 package outlines dimensions in mm
< dual-in-line package intelligent power module > PS22A79 transfer molding type insulated type publication date : february 2012 10 revision record rev. date page revised contents 1 2/1/2012 - new
< dual-in-line package intelligent power module > PS22A79 transfer molding type insulated type publication date : february 2012 11 ? 2012 mitsubishi electric corporation. all rights reserved. dipipm and cstbt are registered trademarks of mitsubishi eletric corporation. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ?these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electric corporation or a third party. ?mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third-party?s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ?all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http://www.mitsubishielectric.com/). ?when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. ?mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ?the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in whole or in part these materials. ?if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other t han the approved destination. any diversion or re-export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ?please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
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